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Same model may have multiple batches, images only for reference.
SI1028X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1028X-T1-GE3

Part No SI1028X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V SC89-6
Datasheet
SI1028X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 650 mOhm @ 500mA, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 2nC @ 10V
Max Input Capacitance 16pF @ 15V
Maximum Power Dissipation 220mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 1095665-SI1028X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1028X-T1-GE3 CAD Model

Description

The Vishay SI1028X-T1-GE3 is a dual N-channel logic level gate MOSFET designed for discrete semiconductor products.

  • Package: SC-89-6
  • Packaging: Reel-TR
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 220mW
  • Mounting: Surface-Mount Technology (SMT)
  • Maximum Rds On @ Id,Vgs: 650 mOhm @ 500mA, 10V
  • Popularity: Popular
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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