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Same model may have multiple batches, images only for reference.
SI1069X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1069X-T1-E3

Part No SI1069X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1069X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 970mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 184mOhm @ 940mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.86 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 308 pF @ 10 V
Power Dissipation (Max) 236mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
Base Product Number SI1069
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277497-SI1069X-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1069X-T1-E3 CAD Model

Description

The Vishay Siliconix SI1069X-T1-E3 is a P-Channel MOSFET transistor that is widely used in various applications.

  • Drain to Source Voltage: 20V
  • Current Continuous Drain: 970mA
  • Rds On (Max): 184mOhm
  • Vgs(th) (Max): 1.5V
  • Popularity: Medium
  • Supply and Demand Status: Limited

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