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Same model may have multiple batches, images only for reference.
SI1303DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1303DL-T1-GE3

Part No SI1303DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 670MA SOT323-3
Datasheet
SI1303DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 670mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 2.2nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 430 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 211606-SI1303DL-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1303DL-T1-GE3 CAD Model

Description

The Vishay SI1303DL-T1-GE3 is an obsolete(EOL) electronic component with high popularity in the market.

  • Polarity: P-Channel
  • Power Dissipation: 290mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 430 mOhm @ 1A, 4.5V
  • Technology: SMD (SMT)
  • Status: Obsolete(EOL)
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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Availability: 15,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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