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SI1305DL-T1-E3

Part No SI1305DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 0.86A SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 280 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 097472-SI1305DL-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1305DL-T1-E3 CAD Model

Description

The Vishay 097472-SI1305DL-T1-E3 is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On: 280 mOhm @ 1A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 4nC @ 4.5V
  • Drive Voltage: 1.8V to 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Continuous Drain Current @ 25°C: 860mA (Ta)
  • Power Dissipation (max): 290mW (Ta)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SC-70-3
  • Dimensions: SC-70, SOT-323
  • Usage: Common-used part
  • Popularity: High
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1016 $57.9120
1,390+ $0.0832 $115.6480
2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,850+ $0.0751 $289.1350
5,085+ $0.0681 $346.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,720 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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