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SI1403CDL-T1-GE3

Part No SI1403CDL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.1A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 281pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 600mW (Ta), 900mW (Tc)
Maximum Rds On at Id,Vgs 140 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 064380-SI1403CDL-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1403CDL-T1-GE3 CAD Model

Description

The Vishay SI1403CDL-T1-GE3 is a P-channel MOSFET with a maximum drain-source voltage rating of 20V and a current rating of 2.1A.

  • Drain-Source Voltage: 20V
  • Current Rating: 2.1A
  • Maximum On-Resistance: 140mOhm
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Package: SC-70-6 (SOT-363)
  • Applications: low-voltage switching applications
  • Operating Temperature: -55°C to 150°C
  • Maximum Gate-Source Voltage: ±12V
  • Supply: Limited
  • Popularity: Medium

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