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SI1405BDH-T1-E3

Part No SI1405BDH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 1.6A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Max Input Capacitance 305pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.47W (Ta), 2.27W (Tc)
Maximum Rds On at Id,Vgs 112 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 064382-SI1405BDH-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si1405BDH
Introduction Date September 17, 2007
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI1405BDH-T1-E3 CAD Model

Description

The Vishay SI1405BDH-T1-E3 is a P-Channel MOSFET with a power dissipation (max) of 1.47W (Ta), 2.27W (Tc).

  • Family Name: Si1405BDH
  • Package: SC-70-6 (SOT-363)
  • Voltage (max Rds On, Min Rds On) Drive Voltage: 1.8V and 4.5V respectively
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds on @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate Charge: 5.5nC @ 4.5V
  • Maximum Input Capacitance: 305pF @ 4V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1164 $50.0520
1,050+ $0.0956 $100.3800
1,620+ $0.0926 $150.0120
2,235+ $0.0896 $200.2560
2,890+ $0.0866 $250.2740
3,870+ $0.0776 $300.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 79,960 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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