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Same model may have multiple batches, images only for reference.
SI1489EDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1489EDH-T1-GE3

Part No SI1489EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 2A SOT-363
Datasheet
SI1489EDH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 16nC @ 4.5V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 48 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 109257-SI1489EDH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1489EDH-T1-GE3 CAD Model

Description

The Vishay SI1489EDH-T1-GE3 is a P-Channel MOSFET that is available in a SOT-363 package.

  • Maximum Power Dissipation: 1.56W (Ta), 2.8W (Tc)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current @ 25°C: 2A (Tc)
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 16nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 48 mOhm @ 3A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
450+ $0.1294 $58.2300
1,090+ $0.1063 $115.8670
1,690+ $0.1028 $173.7320
2,330+ $0.0993 $231.3690
3,015+ $0.0959 $289.1385
4,000+ $0.0866 $346.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,500 pieces
MOQ: 450 pcs
Order Increment : 1 pcs
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