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Same model may have multiple batches, images only for reference.
SI1972DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1972DH-T1-E3

Part No SI1972DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 1.3A SC70-6
Datasheet
SI1972DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 225 mOhm @ 1.3A, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 2.8nC @ 10V
Max Input Capacitance 75pF @ 15V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 097752-SI1972DH-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1972DH-T1-E3 CAD Model

Description

The Vishay 097752-SI1972DH-T1-E3 is a dual N-channel FET designed for standard applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.3A
  • Maximum Rds On: 225 mOhm @ 1.3A, 10V
  • Maximum Power Dissipation: 1.25W
  • Operating Temperature Range: -55°C to 150°C
  • Package: SC-70-6 (SOT-363)
  • Market Popularity: High
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 132,775 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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