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SI2309CDS-T1-GE3

Part No SI2309CDS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4.1nC @ 4.5V
Max Input Capacitance 210pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 345 mOhm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028375-SI2309CDS-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si2309CDS
Introduction Date October 30, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI2309CDS-T1-GE3 CAD Model

Description

The Vishay Si2309CDS series MOSFET is a P-channel component with a package of SOT-23-3 (TO-236).

  • Breakdown Voltage: 60V
  • Continuous Drain Current: 1.6A (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Application: Discrete Semiconductor Products
  • Supply: Reel with a quantity of 3000
  • Classification: EAR99
  • HTSUS: 8541.10.0050
  • Alternative Parts: ZXMP6A13F, ZXMP6A13FTA, and ZXMP6A13FQTA

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Pricing & Ordering

Quantity Unit Price Ext. Price
585+ $0.0856 $50.0760
1,250+ $0.0802 $100.2500
1,940+ $0.0775 $150.3500
2,780+ $0.0720 $200.1600
3,610+ $0.0693 $250.1730
4,505+ $0.0666 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 174,908 pieces
MOQ: 585 pcs
Order Increment : 1 pcs
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