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Same model may have multiple batches, images only for reference.
SI3430DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3430DV-T1-E3

Part No SI3430DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.8A 6-TSOP
Datasheet
SI3430DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Max Gate Charge 6.6nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 170 mOhm @ 2.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095824-SI3430DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3430DV-T1-E3 CAD Model

Description

The Vishay SI3430DV-T1-E3 is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.14W
  • Continuous Drain Current: 1.8A @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Rds On @ Id,Vgs: 170 mOhm @ 2.4A, 10V
  • Package: 6-TSOP
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8143 $63.5005
80+ $1.4887 $119.0960
125+ $1.4421 $180.2625
170+ $1.3957 $237.2690
215+ $1.3492 $290.0780
290+ $1.2095 $350.7550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,700 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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