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Same model may have multiple batches, images only for reference.
SI3445DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3445DV-T1-E3

Part No SI3445DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 6-TSOP
Datasheet
SI3445DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 098791-SI3445DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3445DV-T1-E3 CAD Model

Description

The Vishay SI3445DV-T1-E3 is an obsolete (EOL) MOSFET that was designed for use in a variety of different applications.

  • Type: P-Channel MOSFET
  • Power Dissipation: 2W (Ta)
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Products
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,532 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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