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Same model may have multiple batches, images only for reference.
SI3493DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3493DV-T1-GE3

Part No SI3493DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.3A 6-TSOP
Datasheet
SI3493DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095858-SI3493DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3493DV-T1-GE3 CAD Model

Description

The SI3493DV-T1-GE3 is a P-Channel MOSFET. Manufactured by Vishay

  • Channel Type: P-Channel
  • Status: Obsolete (EOL)
  • Package: 6-TSOP
  • Mounting Technology: SMT (Surface Mount Technology)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 5.3A
  • Maximum Rds On @ Id, Vgs: 27 mOhm @ 7A and 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 1V @ 250μA

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