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SI4124DY-T1-GE3

Part No SI4124DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 20.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 3540pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028449-SI4124DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4124DY-T1-GE3 CAD Model

Description

The Vishay SI4124DY-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 20.5A (Tc).

  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 7.5 mOhm @ 14A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 77nC @ 10V
  • Maximum Input Capacitance: 3540pF @ 20V
  • Power Dissipation: 2.5W (Ta) or 5.7W (Tc)
  • Package: 8-SO
  • Mounting: SMD (SMT) technology
  • Operating Temperature Range: -55°C to 150°C
  • Type: discrete semiconductor product
  • Popularity: Medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1311 $50.8995
110+ $0.9281 $102.0910
170+ $0.8991 $152.8470
230+ $0.8701 $200.1230
300+ $0.8411 $252.3300
400+ $0.7541 $301.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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