SI4124DY-T1-GE3

Part No SI4124DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 20.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 3540pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028449-SI4124DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance

Description

The Vishay SI4124DY-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 20.5A (Tc). The device has a maximum gate-source voltage of ±20V and a maximum Rds On of 7.5 mOhm @ 14A, 10V. It has a gate-source threshold voltage of 3V @ 250μA and a maximum gate charge of 77nC @ 10V. The device has a maximum input capacitance of 3540pF @ 20V and a power dissipation of 2.5W (Ta) or 5.7W (Tc). It comes in an 8-SO package and is mounted using SMD (SMT) technology. The operating temperature range is -55°C to 150°C. This discrete semiconductor product has a medium popularity and a balanced supply and demand status.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
40+ $1.3680 $54.7200
90+ $1.1225 $101.0250
140+ $1.0874 $152.2360
195+ $1.0524 $205.2180
250+ $1.0173 $254.3250
330+ $0.9120 $300.9600
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 7,570 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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