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Same model may have multiple batches, images only for reference.
SI4128DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4128DY-T1-GE3

Part No SI4128DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.9A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 435pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028450-SI4128DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4128DY-T1-GE3 CAD Model

Description

The Vishay SI4128DY-T1-GE3 is an N-channel MOSFET that is designed for use in electronic circuits that require high-speed switching and amplification.

  • Continuous Drain Current: 10.9A @ 25°C
  • Maximum Rds On: 24 mOhm @ 7.8A and 10V
  • Category: Discrete Semiconductor Products
  • Manufacturer: Vishay
  • Supply and Demand: Sufficient
  • Package: 8-SOIC
  • Drive Voltage: 4.5V (max Rds On) and 10V (min Rds On)

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4547 $50.0170
270+ $0.3731 $100.7370
415+ $0.3615 $150.0225
575+ $0.3498 $201.1350
740+ $0.3382 $250.2680
990+ $0.3032 $300.1680
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