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SI4202DY-T1-GE3

Part No SI4202DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 12.1A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.1A
Maximum Rds On at Id,Vgs 14 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 710pF @ 15V
Maximum Power Dissipation 3.7W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095906-SI4202DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4202DY-T1-GE3 CAD Model

Description

The Vishay SI4202DY-T1-GE3 is a high-quality N-channel dual FET designed for use in various electronic circuits.

  • Manufacturer: Vishay
  • Logic Level Gate: Yes
  • Operating Temperature Range: -55°C to 150°C
  • Case/Package: 8-SO
  • Maximum Power Dissipation: 3.7W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12.1A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 710pF @ 15V
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 8A, 10V
  • Commonly Used In: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0036 $50.1800
125+ $0.8235 $102.9375
190+ $0.7978 $151.5820
260+ $0.7720 $200.7200
335+ $0.7463 $250.0105
450+ $0.6691 $301.0950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,479 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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