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SI4204DY-T1-GE3

Part No SI4204DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 19.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 19.8A
Maximum Rds On at Id,Vgs 4.6 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2110pF @ 10V
Maximum Power Dissipation 3.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095907-SI4204DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4204DY-T1-GE3 CAD Model

Description

The Vishay SI4204DY-T1-GE3 is a dual 2 N-Channel FET that is mounted in SMD (SMT) and comes in 8-SO package.

  • Manufacturer: Vishay
  • Maximum Power Dissipation: 3.25W
  • Continuous Drain Current: 19.8A @ 25°C
  • FET Feature: Standard
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Rds On @ Id,Vgs: 4.6 mOhm @ 10A, 10V
  • Application: Industrial and Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1968 $53.8560
105+ $0.9820 $103.1100
160+ $0.9513 $152.2080
220+ $0.9206 $202.5320
285+ $0.8900 $253.6500
380+ $0.7979 $303.2020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,540 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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