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SI4490DY-T1-GE3

Name: SI4490DY-T1-GE3
Brand: Vishay
SKU: 321915
Availability: InStock
Rating: 4.91 (48 reviews)

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Part No	SI4490DY-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 200V 2.85A 8-SOIC
Datasheet	SI4490DY-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	200V
Continuous Drain Current at 25°C	2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	2V @ 250μA (Min)
Max Gate Charge	42nC @ 10V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	1.56W (Ta)
Maximum Rds On at Id,Vgs	80 mOhm @ 4A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	028504-SI4490DY-T1-GE3
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian SI4490DY-T1-GE3 CAD Model

Alternative Products

Description

The SI4490DY-T1-GE3 is an N-channel MOSFET transistor manufactured by Vishay.

Power Dissipation: 1.56W (Ta)
Continuous Drain Current: 2.85A (Ta) @ 25°C
Package: 8-SO
Commonly Used in: Discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
23+	$2.1963	$50.5149
49+	$2.0546	$100.6754
76+	$1.9837	$150.7612
109+	$1.8420	$200.7780
142+	$1.7712	$251.5104
177+	$1.7003	$300.9531

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,900 pieces

MOQ: 23 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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