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Same model may have multiple batches, images only for reference.
SI4630DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4630DY-T1-GE3

Part No SI4630DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A 8-SOIC
Datasheet
SI4630DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 161nC @ 10V
Max Input Capacitance 6670pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095974-SI4630DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4630DY-T1-GE3 CAD Model

Description

The Vishay SI4630DY-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current of 40A @ 25 degrees Celsius.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25 Degrees Celsius: 40A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 161nC @ 10V
  • Mounting Type: SMD
  • Package: 8-SO
  • Operating Temperature Range: -55 degrees Celsius to 150 degrees Celsius
  • Channel Type: N-Channel

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