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SI4876DY-T1-E3

Part No SI4876DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 14A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 80nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 5 mOhm @ 21A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 101639-SI4876DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4876DY-T1-E3 CAD Model

Description

The Vishay 329384 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.6W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (Ta) @ 25°C: 14A
  • Gate-Source Threshold Voltage: 600mV @ 250μA (Min)
  • Maximum Gate Charge: 80nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 5 mOhm @ 21A, 4.5V
  • Package: 8-SO case
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Status: obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 954 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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