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Same model may have multiple batches, images only for reference.
SI4892DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4892DY-T1-GE3

Part No SI4892DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.8A 8-SOIC / Trans MOSFET N-CH 30V 8.8A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 800mV @ 250μA (Minimum)
Gate Charge (Qg) (Maximum) @ Vgs 10.5nC @ 5V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.6W (Ta)
Rds On (Maximum) @ Id, Vgs 12 mOhm @ 12.4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794277-SI4892DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name Si4892DY
Introduction Date February 05, 2001
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4892DY-T1-GE3 CAD Model

Description

The Vishay Siliconix 794277-SI4892DY-T1-GE3 is an obsolete (EOL) electronic component manufactured by Vishay Siliconix.

  • Type: MOSFET
  • Current-Continuous Drain (Id) @ 25°C: 8.8A (Ta)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Power Dissipation (Maximum): 1.6W (Ta)
  • Drain Source Voltage: 30V
  • Gate Charge (Qg) (Maximum) @ Vgs: 10.5nC @ 5V
  • Cross-reference: RK4410, NTMS4706NR2, RXH125N03TB, ISL9N312ASK8T

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