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SI4909DY-T1-GE3

Part No SI4909DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 40V 8A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 27 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2000pF @ 20V
Maximum Power Dissipation 3.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096033-SI4909DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4909DY-T1-GE3 CAD Model

Description

The Vishay product with the Win Source Part Number 1096033-SI4909DY-T1-GE3 is an active electronic component with a balance supply and demand status.

  • Status: Active
  • Supply and Demand Status: Balanced
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • FET Type: 2 P-Channel (Dual)
  • Gate: Logic Level
  • Categories: Discrete semiconductor products
  • Case / Package: 8-SO
  • Maximum Power Dissipation: 3.2W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 63nC @ 10V
  • Max Input Capacitance: 2000pF @ 20V
  • Maximum Rds On: 27 mOhm @ 8A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8798 $52.7880
125+ $0.8241 $103.0125
190+ $0.7962 $151.2780
275+ $0.7406 $203.6650
355+ $0.7127 $253.0085
440+ $0.6849 $301.3560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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