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Same model may have multiple batches, images only for reference.
SI4947DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4947DY-T1-E3

Part No SI4947DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 30 Volt 3.5 Amp 2.0W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 3 A
Drain to Source Resistance 85 mΩ
Drain to Source Voltage (Vdss) -30 V
Element Configuration Dual
Fall Time 10 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -55 °C
Number of Channels 2
Number of Pins 8
Power Dissipation 2 W
Rise Time 9 ns
RoHS Compliant
Turn-Off Delay Time 21 ns
Turn-On Delay Time 8 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092893-SI4947DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4947DY-T1-E3 CAD Model

Description

The SI4947DY-T1-E3 is a dual-channel MOSFET transistor designed for use in RF applications.

  • Drain-to-Source Voltage (Vdss): -30V
  • Continuous Drain Current (ID): 3A
  • On-State Resistance: 85mΩ
  • Package: SO
  • Pins: 8
  • Weight: 186.993455mg
  • Rise Time: 9ns
  • Fall Time: 10ns
  • RoHS Compliant: Yes
  • Operating Temperatures: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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