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SI5471DC-T1-GE3

Part No SI5471DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 2945pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta), 6.3W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 9.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 125147-SI5471DC-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si5471DC
Introduction Date June 03, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI5471DC-T1-GE3 CAD Model

Description

The SI5471DC-T1-GE3 is a P-channel MOSFET that is designed for use in various electronic applications.

  • Package: reel - TR
  • Mounting: surface mount device
  • Maximum Power Dissipation: 2.5W (Ta), 6.3W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6A (Tc)
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Case/Package: 1206-8 ChipFET
  • Ideal For: power supplies, voltage regulators, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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