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Same model may have multiple batches, images only for reference.
SI5853DC-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI5853DC-T1-E3

Part No SI5853DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A 1206-8
Datasheet
SI5853DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.7nC @ 4.5V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 096528-SI5853DC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5853DC-T1-E3 CAD Model

Description

The SI5853DC-T1-E3 is a P-Channel MOSFET from Vishay with Schottky diode (isolated) feature.

  • Packaging: reel
  • Popularity: medium
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 2.7A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 7.7nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 110 mOhm @ 2.7A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Mounting: SMD (SMT)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7173 $60.9705
200+ $0.5886 $117.7200
305+ $0.5703 $173.9415
420+ $0.5518 $231.7560
545+ $0.5334 $290.7030
725+ $0.4782 $346.6950
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Availability: 38,068 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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