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Same model may have multiple batches, images only for reference.
SI5902BDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5902BDC-T1-E3

Part No SI5902BDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4A 1206-8
Datasheet
SI5902BDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Tc)
Maximum Rds On at Id,Vgs 65 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 220pF @ 15V
Maximum Power Dissipation 3.12W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096092-SI5902BDC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5902BDC-T1-E3 CAD Model

Description

The Vishay SI5902BDC-T1-E3 is a dual N-channel logic level FET in a 1206-8 ChipFET package.

  • Channels: Dual N-Channel
  • Package: 1206-8 ChipFET
  • Breakdown Voltage: 30V
  • Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 7nC @ 10V
  • On-Resistance: 65 mOhm (Max) @ 3.1A and 10V Gate-Source Voltage
  • Input Capacitance: 220pF (Max) @ 15V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 3.12W (Max)
  • Status: Active
  • Popularity: Popular

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8736 $61.1520
165+ $0.7169 $118.2885
250+ $0.6945 $173.6250
345+ $0.6721 $231.8745
445+ $0.6497 $289.1165
595+ $0.5825 $346.5875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,430 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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