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Same model may have multiple batches, images only for reference.
SI5902BDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5902BDC-T1-GE3

Part No SI5902BDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4A 1206-8
Datasheet
SI5902BDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 65 mOhm @ 3.1A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 220pF @ 15V
Maximum Power Dissipation 3.12W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096093-SI5902BDC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5902BDC-T1-GE3 CAD Model

Description

The Vishay SI5902BDC-T1-GE3 is a dual N-channel chip FET with a logic level gate.

  • Category: discrete semiconductor products
  • Status: active
  • Operating Temperature Range: -55°C to 150°C
  • Package: 1206-8 ChipFET
  • Maximum Power Dissipation: 3.12W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 7nC @ 10V
  • Maximum Input Capacitance: 220pF @ 15V
  • Maximum Rds On: 65 mOhm @ 3.1A, 10V
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
3+ $20.5264 $61.5792
6+ $16.8422 $101.0532
10+ $16.3158 $163.1580
13+ $15.7895 $205.2635
17+ $15.2632 $259.4744
22+ $13.6843 $301.0546
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