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Same model may have multiple batches, images only for reference.
SI6423DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6423DQ-T1-E3

Part No SI6423DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8.2A 8-TSSOP
Datasheet
SI6423DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 400μA
Max Gate Charge 110nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 028585-SI6423DQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6423DQ-T1-E3 CAD Model

Description

The Vishay SI6423DQ-T1-E3 is a P-Channel MOSFET that is part of the Discrete Semiconductor Products category. The supply and demand status of this product is limited.

  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: Limited
  • Package: 8-TSSOP (0.173", 4.40mm Width)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5953 $63.8120
90+ $1.3090 $117.8100
140+ $1.2681 $177.5340
190+ $1.2272 $233.1680
245+ $1.1863 $290.6435
330+ $1.0635 $350.9550
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