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Same model may have multiple batches, images only for reference.
SI6467BDQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6467BDQ-T1-GE3

Part No SI6467BDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 6.8A 8TSSOP
Datasheet
SI6467BDQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 850mV @ 450μA
Max Gate Charge 70nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1096107-SI6467BDQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6467BDQ-T1-GE3 CAD Model

Description

The Vishay 1096107-SI6467BDQ-T1-GE3 is a P-Channel MOSFET transistor that comes in an 8-TSSOP package.

  • Package: 8-TSSOP
  • Maximum Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 6.8A (Ta)
  • Maximum Rds On @ Id, Vgs: 12.5 mOhm @ 8A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 850mV @ 450μA
  • Maximum Gate Charge: 70nC @ 4.5V
  • Suitable for: Discrete Semiconductor Products
  • Supply and Demand: Balanced
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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