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Same model may have multiple batches, images only for reference.
SI6473DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6473DQ-T1-E3

Part No SI6473DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6.2A 8-TSSOP
Datasheet
SI6473DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 70nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.08W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 9.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1096108-SI6473DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6473DQ-T1-E3 CAD Model

Description

The Vishay SI6473DQ-T1-E3 is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Channel Type: P-channel
  • Package: 8-TSSOP
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 6.2A (Ta)
  • Gate-Source Threshold Voltage (Min): 450mV @ 250μA
  • Gate Charge (Max): 70nC @ 5V
  • Rds On (Max): 12.5 mOhm @ 9.5A, 4.5V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3481 $60.6645
105+ $1.1063 $116.1615
165+ $1.0716 $176.8140
225+ $1.0371 $233.3475
290+ $1.0025 $290.7250
390+ $0.8988 $350.5320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,520 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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