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Same model may have multiple batches, images only for reference.
SI6943BDQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6943BDQ-T1-GE3

Part No SI6943BDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 2.3A 8TSSOP
Datasheet
SI6943BDQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 80 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 10nC @ 4.5V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1096114-SI6943BDQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6943BDQ-T1-GE3 CAD Model

Description

The SI6943BDQ-T1-GE3 is a dual P-channel MOSFET designed for use in switching applications.

  • Manufacturer: Unknown
  • MOSFET Type: Dual P-channel
  • Drain-Source Breakdown Voltage: 12 V
  • Continuous Drain Current: 2.3 A @ 25°C
  • Gate-Source Threshold Voltage: 800 mV @ 250 μA
  • Maximum Gate Charge: 10 nC @ 4.5 V
  • Package: 8-TSSOP
  • RoHS Compliant: Yes
  • Ideal Use: Switching applications (power supplies, motor control, communication)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $30.2541 $60.5082
5+ $24.8244 $124.1220
8+ $24.0483 $192.3864
10+ $23.2733 $232.7330
13+ $22.4971 $292.4623
18+ $20.1698 $363.0564
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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