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SI6973DQ-T1-E3

Part No SI6973DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.1A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.1A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 30nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 028591-SI6973DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6973DQ-T1-E3 CAD Model

Description

The Vishay SI6973DQ-T1-E3 is a dual P-channel FET that is designed for surface mount applications.

  • Packaging: Reel
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4.1A
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 4.8A, 4.5V
  • Package: 8-TSSOP
  • Popularity: Medium
  • Applications: Ideal for use in various electronic devices such as power supplies, amplifiers, and other applications that require a high level of accuracy and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3456 $60.5520
105+ $1.1042 $115.9410
165+ $1.0695 $176.4675
225+ $1.0349 $232.8525
290+ $1.0002 $290.0580
390+ $0.8974 $349.9860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,900 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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