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Same model may have multiple batches, images only for reference.
SI7106DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7106DN-T1-E3

Part No SI7106DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12.5A 1212-8
Datasheet
SI7106DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 27nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 19.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028592-SI7106DN-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7106DN-T1-E3 CAD Model

Description

The Vishay SI7106DN-T1-E3 is a N-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 12.5A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 27nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 6.2 mOhm @ 19.5A, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK 1212-8
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1964 $53.8380
105+ $0.9817 $103.0785
160+ $0.9510 $152.1600
220+ $0.9204 $202.4880
285+ $0.8897 $253.5645
380+ $0.7976 $303.0880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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