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Same model may have multiple batches, images only for reference.
SI7368DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7368DP-T1-E3

Part No SI7368DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 13A PPAK SO-8
Datasheet
SI7368DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 25nC @ 4.5V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.7W (Ta)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064562-SI7368DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7368DP-T1-E3 CAD Model

Description

The Vishay SI7368DP-T1-E3 is an N-channel MOSFET from Vishay.

  • Maximum Power Dissipation: 1.7W
  • Continuous Drain Current: 13A @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 5.5 mOhm @ 20A, 10V
  • Supply and Demand Status: balanced

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