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Same model may have multiple batches, images only for reference.
SI7392DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7392DP-T1-E3

Part No SI7392DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
SI7392DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 9.75 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028633-SI7392DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7392DP-T1-E3 CAD Model

Description

The SI7392DP-T1-E3 is a N-Channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A @ 25°C
  • On-Resistance: 9.75 mOhm @ 15A and 10V
  • Package: PowerPAK SO-8
  • Mounting Technology: Surface-mount
  • Status: Obsolete (EOL)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0915 $60.0325
130+ $0.8963 $116.5190
200+ $0.8686 $173.7200
280+ $0.8397 $235.1160
360+ $0.8120 $292.3200
480+ $0.7277 $349.2960
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Availability: 67,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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