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Same model may have multiple batches, images only for reference.
SI7405BDN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7405BDN-T1-E3

Part No SI7405BDN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 16A PPAK 1212-8 / Trans MOSFET P-CH 12V 16A 8-Pin PowerPAK 1212 T/R
Datasheet
SI7405BDN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 12V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 115nC @ 8V
Input Capacitance (Ciss) (Maximum) @ Vds 3500pF @ 6V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 3.6W (Ta), 33W (Tc)
Rds On (Maximum) @ Id, Vgs 13 mOhm @ 13.5A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 794313-SI7405BDN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7405BDN
Introduction Date March 13, 2008
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7405BDN-T1-E3 CAD Model

Description

The Vishay Siliconix Si7405BDN-T1-E3 is a TrenchFET MOSFET that is designed for use in discrete semiconductor products.

  • Channel Type: P-channel
  • Drain-Source Voltage: 12V
  • Gate-Source Voltage (Maximum): ±8V
  • Continuous Drain Current: 16A @ 25°C
  • Power Dissipation: 33W @ Tc
  • Rds On: 13 mOhm @ 13.5A and 4.5V
  • Input Capacitance: 3500pF @ 6V
  • Gate Charge: 115nC @ 8V
  • Package: PowerPAK 1212-8
  • Mounting: SMD
  • Supply and Demand: Limited

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