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Same model may have multiple batches, images only for reference.
SI7414DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7414DN-T1-E3

Part No SI7414DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 5.6A 1212-8
Datasheet
SI7414DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 8.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028636-SI7414DN-T1-E3
Family Name Si7414DN
Introduction Date October 17, 2001
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7414DN-T1-E3 CAD Model

Description

The Vishay Si7414DN-T1-E3 is an N-channel MOSFET with a power dissipation of 1.5W (Ta) and a drain-source breakdown voltage of 60V.

  • Continuous Drain Current: 5.6A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 8.7A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Family: Si7414DN
  • Package: PowerPAK 1212-8
  • Estimated EOL Date: 2024
  • Halogen-Free: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9504 $52.2720
115+ $0.8903 $102.3845
175+ $0.8602 $150.5350
250+ $0.8000 $200.0000
325+ $0.7700 $250.2500
410+ $0.7399 $303.3590
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