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SI7459DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7459DP-T1-E3

Part No SI7459DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 13A PPAK SO-8
Datasheet
SI7459DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 170nC @ 10V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 112448-SI7459DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7459DP-T1-E3 CAD Model

Description

The Vishay 112448-SI7459DP-T1-E3 is a P-channel MOSFET power transistor that belongs to the Discrete Semiconductor Products category.

  • Manufacturer: Vishay
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 13A (Ta)
  • Maximum Rds On at Id,Vgs: 6.8 mOhm @ 22A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 170nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.8240 $64.9520
56+ $2.3182 $129.8192
87+ $2.2457 $195.3759
120+ $2.1732 $260.7840
154+ $2.1008 $323.5232
207+ $1.8835 $389.8845
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Availability: 16,500 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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