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SI7635DP-T1-GE3

Part No SI7635DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 40A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 143nC @ 10V
Max Input Capacitance 4595pF @ 10V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 5W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 138537-SI7635DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7635DP-T1-GE3 CAD Model

Description

The Vishay SI7635DP-T1-GE3 is a P-channel MOSFET that is part of the PowerPAK SO-8 series.

  • Channel Type: P-channel
  • Breakdown Voltage: 20V
  • Continuous Drain Current: 40A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 143nC @ 10V
  • Maximum Input Capacitance: 4595pF @ 10V
  • Maximum Rds On: 4.9 mOhm @ 26A, 10V
  • Package: PowerPAK SO-8
  • Supply: Reel of 3000 units
  • Mounting: SMD technology
  • Temperature Range: -55°C to 150°C
  • Family: VJ0805
  • Applications: Power management and industrial applications
  • Supply and Demand Status: Limited
  • Alternatives: AON7421 and Si7149ADP-T1-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.9159 $83.7477
5+ $22.9053 $114.5265
8+ $22.1896 $177.5168
11+ $21.4738 $236.2118
14+ $20.7580 $290.6120
19+ $18.6106 $353.6014
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Availability: 2,990 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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