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Same model may have multiple batches, images only for reference.
SI7790DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7790DP-T1-GE3

Part No SI7790DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A PPAK SO-8
Datasheet
SI7790DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 4200pF @ 20V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 5.2W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064574-SI7790DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7790DP-T1-GE3 CAD Model

Description

The Vishay 064574-SI7790DP-T1-GE3 is an N-channel MOSFET that can operate at a temperature range of -55°C to 150°C (TJ).

  • Channel Type: N-channel
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 50A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 4200pF @ 20V
  • Maximum Gate-Source Voltage: ±25V
  • Case/Package: PowerPAK SO-8
  • Maximum Rds On: 4.5 mOhm @ 15A and 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Common Use: Industrial power management applications

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223+ $1.5597 $347.8131
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