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Same model may have multiple batches, images only for reference.
SI7804DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7804DN-T1-GE3

Part No SI7804DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 1212-8
Datasheet
SI7804DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 13nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096198-SI7804DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7804DN-T1-GE3 CAD Model

Description

The Vishay MOSFET 1096198-SI7804DN-T1-GE3 is a N-Channel polarity SMD (SMT) electronic component, belonging to the Discrete Semiconductor Products category. Vishay 1096198-SI7804DN-T1-GE3

  • Channel Type: N-Channel
  • Mounting Type: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.5A (Ta)
  • Case/Package: PowerPAK 1212-8
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Rds On @ Id,Vgs: 18.5 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: -
  • Maximum Gate Charge @ 5V: 13nC
  • Power Dissipation (Max): 1.5W (Ta)
  • Product Status: active
  • Popularity: medium

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Quantity Unit Price Ext. Price
70+ $0.8277 $57.9390
175+ $0.6791 $118.8425
265+ $0.6580 $174.3700
365+ $0.6368 $232.4320
470+ $0.6155 $289.2850
630+ $0.5519 $347.6970
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