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SI7884BDP-T1-E3

Part No SI7884BDP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 58A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 58A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 77nC @ 10V
Max Input Capacitance 3540pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028683-SI7884BDP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7884BDP
Introduction Date April 17, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI7884BDP-T1-E3 CAD Model

Description

The Vishay Si7884BDP-T1-E3 is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current @ 25°C: 58A
  • Maximum Power Dissipation: 4.6W
  • Package: PowerPAK SO-8
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 7.5 mOhm @ 16A, 10V
  • Packaging: Tape and Reel
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5953 $63.8120
90+ $1.3090 $117.8100
140+ $1.2681 $177.5340
190+ $1.2272 $233.1680
245+ $1.1863 $290.6435
330+ $1.0635 $350.9550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,750 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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