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Same model may have multiple batches, images only for reference.
SI7911DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7911DN-T1-GE3

Part No SI7911DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.2A 1212-8
Datasheet
SI7911DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.2A
Maximum Rds On at Id,Vgs 51 mOhm @ 5.7A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 101604-SI7911DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI7911DN-T1-GE3 CAD Model

Description

The Vishay 101604-SI7911DN-T1-GE3 is a 2 P-Channel (Dual) FET with a Logic Level Gate, suitable for use in industrial, power management, and portable devices.

  • FET Type: 2 P-Channel (Dual)
  • Gate: Logic Level Gate
  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.2A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 51 mOhm @ 5.7A, 4.5V
  • Package: PowerPAK 1212-8 Dual
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,400 pieces
MOQ: 115 pcs
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