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SI7980DP-T1-GE3

Part No SI7980DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Maximum) @ Id, Vgs 22 mOhm @ 5A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1010pF @ 10V
Power - Max 19.8W, 21.9W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package PowerPAK SO-8 Dual
Manufacturer Package PowerPAK SO-8 Dual
Win Source Part Number 1249566-SI7980DP-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7980DP-T1-GE3 CAD Model

Description

The SI7980DP-T1-GE3 is a high-quality electronic component manufactured by Vishay. It is a TrenchFET series 2 N-Channel FET that is used in half bridge circuits.

  • Series: TrenchFET
  • Channel: N-Channel
  • Application: Half Bridge Circuits
  • Maximum Continuous Drain Current: 8A
  • Maximum Power: 19.8W
  • Packaging: PowerPAK SO-8 Dual
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Balanced
  • Popularity: Medium
  • FET Feature: Standard
  • Rds On: 22 mOhm @ 5A, 10V
  • Alternative Parts: UPA2463T1Q-E1-AX, uPA2465T1QE1AX, and u PA2460T1Q-E1-AX

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,020+ $0.0567 $57.8340
2,485+ $0.0466 $115.8010
3,840+ $0.0452 $173.5680
5,295+ $0.0437 $231.3915
6,835+ $0.0423 $289.1205
9,150+ $0.0379 $346.7850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 1020 pcs
Order Increment : 1 pcs
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