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Same model may have multiple batches, images only for reference.
SI8401DB-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI8401DB-T1-E3

Part No SI8401DB-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 2X2 4-MFP
Datasheet
SI8401DB-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 17nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 064585-SI8401DB-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8401DB-T1-E3 CAD Model

Description

The Vishay SI8401DB-T1-E3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 3.6A @ 25°C.

  • Rds On @ Id,Vgs (Max): 65 mOhm @ 1A, 4.5V
  • Gate Charge (Max): 17nC @ 4.5V
  • Mounting Type: SMD (SMT)
  • Package: 4-XFBGA, CSPBGA
  • Gate-Source Voltage (Max): ±12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8073 $60.5475
175+ $0.6630 $116.0250
270+ $0.6422 $173.3940
375+ $0.6214 $233.0250
485+ $0.6006 $291.2910
645+ $0.5382 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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