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Same model may have multiple batches, images only for reference.
SI8900EDB-T2-E1 Vishay
Same model may have multiple batches, images only for reference.

SI8900EDB-T2-E1

Part No SI8900EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.4A 10-MFP / Trans MOSFET N-CH Si 20V 5.4A 10-Pin Micro Foot T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 5.4A
Vgs(th) (Maximum) @ Id 1V @ 1.1mA
Power - Max 1W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 10-UFBGA, CSPBGA
Manufacturer Package 10-Micro Foot CSP (2x5)
Win Source Part Number 794381-SI8900EDB-T2-E1
Popularity Medium
Supply and Demand Status Limited
Family Name SI8900EDB
Introduction Date August 22, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI8900EDB-T2-E1 CAD Model

Description

The SI8900EDB-T2-E1 is a Vishay Siliconix TrenchFET.

  • Popularity: Medium
  • Supply Status: Limited
  • Win Source Part Number: 794381
  • Maximum Continuous Drain Current: 5.4A
  • Maximum Power: 1W
  • Mounting: SMD
  • Package: 10-UFBGA, CSPBGA
  • FET Type: Dual N-channel
  • Gate Type: Logic Level
  • Manufacturer Package: 10-Micro Foot CSP (2x5)
  • Introduction Date: August 22, 2002
  • ECCN: EAR99 compliant
  • Compliance: Halogen-free

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