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Same model may have multiple batches, images only for reference.
SI9926CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI9926CDY-T1-E3

Part No SI9926CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8A 8-SOIC
Datasheet
SI9926CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 18 mOhm @ 8.3A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1200pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064624-SI9926CDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI9926CDY-T1-E3 CAD Model

Description

The Vishay 064624-SI9926CDY-T1-E3 is a 2 N-Channel (Dual) FET with a logic level gate feature, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 8A
  • Maximum Power Dissipation: 3.1W
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 8.3A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7709 $52.6471
44+ $2.2736 $100.0384
69+ $2.2026 $151.9794
94+ $2.1315 $200.3610
122+ $2.0605 $251.3810
163+ $1.8473 $301.1099
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Availability: 10,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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