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Same model may have multiple batches, images only for reference.
SIA477EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA477EDJ-T1-GE3

Part No SIA477EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA477EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 14mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds 2970 pF @ 6 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA477
Other Names SIA477EDJ-T1-GE3TR,SIA477EDJ-T1-GE3DKR,SIA477EDJ-T1-GE3,SIA477EDJ-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277573-SIA477EDJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA477EDJ-T1-GE3 CAD Model

Description

The Vishay Siliconix SIA477EDJ-T1-GE3 is a P-Channel MOSFET transistor that can handle a continuous drain current of 12A @ 25°C.

  • Maximum drain-to-source voltage: 12V
  • Maximum on-resistance: 14mOhm @ 7A and 4.5V
  • Package: PowerPAK SC-70-6 package
  • Gate charge: 87 nC @ 8V
  • Input capacitance: 2970 pF @ 6V
  • Temperature range: -55°C to 150°C (TJ)

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23+ $4.5374 $104.3602
35+ $4.3956 $153.8460
48+ $4.2538 $204.1824
61+ $4.1120 $250.8320
82+ $3.6866 $302.3012
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