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Same model may have multiple batches, images only for reference.
SIA914DJ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIA914DJ-T1-E3

Part No SIA914DJ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA914DJ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Power - Max 6.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA914
Other Names SIA914DJT1E3,SIA914DJ-T1-E3DKR,SIA914DJ-T1-E3TR,SIA914DJ-T1-E3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278487-SIA914DJ-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIA914DJ-T1-E3 CAD Model

Description

Vishay Siliconix's SIA914DJ-T1-E3 is a dual N-channel MOSFET transistor with a logic level gate.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 4.5A
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 3.7A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5254 $57.7940
270+ $0.4312 $116.4240
415+ $0.4176 $173.3040
575+ $0.4043 $232.4725
740+ $0.3908 $289.1920
990+ $0.3504 $346.8960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,300 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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