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SIA975DJ-T1-GE3

Name: SIA975DJ-T1-GE3
Brand: Vishay
SKU: 323388
Availability: InStock
Rating: 4.93 (48 reviews)

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Part No	SIA975DJ-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	Trans MOSFET P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R / MOSFET 2P-CH 12V 4.5A SC-70-6
Datasheet	SIA975DJ-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	12V
Continuous Drain Current at 25°C	4.5A
Maximum Rds On at Id,Vgs	41 mOhm @ 4.3A, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	26nC @ 8V
Max Input Capacitance	1500pF @ 6V
Maximum Power Dissipation	7.8W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SC-70-6 Dual
Win Source Part Number	028735-SIA975DJ-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Application Field	Used in Industrial, Power Management
Family Name	SiA975DJ
Introduction Date	February 03, 2010
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	2027
Ultra Librarian 3D Model	Ultra Librarian SIA975DJ-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SiA975DJ-T1-GE3 is a 2 P-Channel dual FET that is widely used in industrial and power management applications.

Supply and Demand Status: sufficient
Maximum Power Dissipation: 7.8W
Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
85+	$0.5896	$50.1160
185+	$0.5523	$102.1755
285+	$0.5336	$152.0760
405+	$0.4963	$201.0015
525+	$0.4777	$250.7925
655+	$0.4590	$300.6450

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 39,000 pieces

MOQ: 85 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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