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SIB412DK-T1-E3

Part No SIB412DK-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.16 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 10 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB412
Other Names SIB412DK-T1-E3TR,SIB412DK-T1-E3DKR,SIB412DK-T1-E3CT,SIB412DKT1E3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277563-SIB412DK-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIB412DK-T1-E3 CAD Model

Description

The Vishay Siliconix SIB412DK-T1-E3 MOSFET is a N-Channel FET.

  • Drain to source voltage: 20V
  • Continuous drain current: 9A @ 25°C
  • Rds On: 34mOhm @ 6.6A and 4.5V
  • Gate charge: 10.16nC @ 5V
  • Input capacitance: 535pF @ 10Vds
  • Designed for: applications such as power management, load switching, and battery protection
  • Package: PowerPAK SC-75-6

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4112 $59.6240
345+ $0.3375 $116.4375
535+ $0.3269 $174.8915
735+ $0.3164 $232.5540
945+ $0.3058 $288.9810
1,265+ $0.2742 $346.8630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,320 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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